参数资料
型号: MTB60N05HD
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: D2PAK-3
文件页数: 6/13页
文件大小: 161K
代理商: MTB60N05HD
MTB60N05HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
50
55
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = –25°C)
IDSS
10
100
Adc
Gate–Body Leakage Current
(VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.5
2.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 30 Adc)
RDS(on)
0.010
0.014
Ohms
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ = 125°C)
VDS(on)
1.0
0.75
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 20 Adc)
gFS
15
48
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
2775
4000
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
750
1070
Transfer Capacitance
f = 1.0 MHz)
Crss
150
300
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
21
40
ns
Rise Time
(VDD = 25 Vdc, ID = 60 Adc,
tr
570
1150
Turn–Off Delay Time
(VDD 25 Vdc, ID 60 Adc,
VGS = 5.0 Vdc, RG = 9.1 )
td(off)
86
170
Fall Time
tf
200
400
Gate Charge
QT
42
62
nC
g
(VDS = 40 Vdc, ID = 60 Adc,
Q1
8.0
(VDS 40 Vdc, ID 60 Adc,
VGS = 5.0 Vdc)
Q2
24
Q3
17
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.95
0.85
1.1
Vdc
Reverse Recovery Time
trr
50
ns
y
(IS = 30 Adc, VGS = 0 Vdc,
ta
34
(IS 30 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s)
tb
15
Reverse Recovery Stored Charge
QRR
0.085
C
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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