参数资料
型号: MTB60N05HD
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: D2PAK-3
文件页数: 7/13页
文件大小: 161K
代理商: MTB60N05HD
MTB60N05HDL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage
Current versus Voltage
-55°C
2.5 V
VGS = 10 V
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
20
40
80
120
100
60
0
20
40
80
120
100
60
1.5
2.0
2.5
4.0
3.0
3.5
0.006
0.008
0.012
0.016
0.018
0.014
0.010
0
20
40
60
80
120
100
0
20
40
60
80
120
100
0.006
0.008
0.010
0.012
0.014
0.013
0.011
0.009
0.007
-50 -25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.4
1.8
1.2
1.6
1.0
10
100
10,000
5.0
10
20
35
40
50
30
110
10
30
50
70
90
45
15
25
1000
TJ = 25°C
8.0 V
3.0 V
3.5 V
6.0 V
5.0 V
4.5 V
4.0 V
VDS ≥ 10 V
TJ = 125°C
25°C
-55°C
TJ = 100°C
25°C
TJ = 25°C
VGS = 5.0 V
10 V
VGS = 10 V
ID = 5.0 A
VGS = 0 V
100°C
TJ = 125°C
25°C
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