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参数资料
| 型号： | MTD1P40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 10/12页 |
| 文件大小： | 126K |
| 代理商： | MTD1P40E |
MTD1P40E
http://onsemi.com
7
SAFE OPERATING AREA
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
,SINGLE
PULSE
DRAINT
OSOURCE
AS
E
TJ, STARTING JUNCTION TEMPERATURE (°C)
A
V
ALANCHE
ENERGY
(mJ)
ID = 1.0A
36
28
20
4
0
25
50
75
100
125
10
1
0.1
1
10
100
1000
1 ms
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
8
12
16
24
32
1
0.1
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
t, TIME (SECONDS)
D = 0.5
0.2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
48
40
44
100
s
10 ms
dc
1.0E+01
0.1
0.05
0.02
0.01
SINGLE PULSE
150
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