- 您现在的位置：买卖IC网 > PDF目录98046 > MTD1P40E (ON SEMICONDUCTOR) 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTD1P40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 126K |
| 代理商： | MTD1P40E |
MTD1P40E
http://onsemi.com
6
DRAINTOSOURCE DIODE CHARACTERISTICS
Qg, TOTAL GATE CHARGE (nC)
12
8
6
4
2
0
03
6
9
12
V
DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
V
GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
400
300
200
100
0
TJ = 25°C
ID = 1.0 A
QT
Q2
Q3
VGS
t,TIME
(ns)
100
10
1
10
100
RG, GATE RESISTANCE (OHMS)
TJ = 25°C
ID = 1.0 A
VDD = 200 V
VGS = 10 V
td(off)
td(on)
tf
tr
10
VDS
0
0.4
0.8
0
0.1
0.2
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
1.2
2.4
1.0
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
15
500
600
Q1
1.6
2.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous draintosource voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal ResistanceGeneral
Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20N03HDLT4 | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HD-1 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HD | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HD1 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDLT4 | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2001 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
| MTD2001-4101 | 功能描述:马达/运动/点火控制器和驱动器 VCEO=60 IO=1.5 PT=5 RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MTD2001-4102 | 功能描述:马达/运动/点火控制器和驱动器 VCEO=60 IO=1.5 PT=5 RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。