参数资料
型号: MTD1P40E
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 5/12页
文件大小: 126K
代理商: MTD1P40E
MTD1P40E
http://onsemi.com
2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
400
Vdc
GateSource Voltage
Continuous
Single Pulse (tp ≤ 50 s)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
1.0
0.8
3.5
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C, when mounted with the minimum recommended pad size
PD
65
0.53
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1.)
Junction to Ambient (Note 2.)
RθJC
RθJA
1.91
120
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 1
″ pad size.
相关PDF资料
PDF描述
MTD20N03HDLT4 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06HD-1 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06HD 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06HD1 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06HDLT4 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
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