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| 型号： | MTD5P06VT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 5A DPAK |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 510pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | MTD5P06VT4OSDKR |
MTD5P06V
Preferred Device
Power MOSFET
5 Amps, 60 Volts P?Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
http://onsemi.com
critical and offer additional safety margin against unexpected voltage
transients.
Features
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
? Pb?Free Packages are Available
V (BR)DSS
60 V
R DS(on) TYP
340 m W
P?Channel
D
I D MAX
5.0 A
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 1.0 M W )
Gate?to?Source Voltage
? Continuous
? Non?repetitive (t p ≤ 10 ms)
Symbol
V DSS
V DGR
V GS
V GSM
Value
60
60
± 15
± 25
Unit
Vdc
Vdc
Vdc
Vpk
G
S
MARKING
DIAGRAM
Drain Current ? Continuous @ 25 ° C
? Continuous @ 100 ° C
? Single Pulse (t p ≤ 10 m s)
I D
I D
I DM
5
4
18
Adc
Apk
4
4
Drain
Total Power Dissipation @ 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 2)
P D
40
0.27
2.1
W
W/ ° C
W
1 2
3
DPAK
CASE 369C
STYLE 2
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
T J , T stg
E AS
?55 to
175
125
° C
mJ
1
Gate
2
Drain
3
Source
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 5 Apk, L = 10 mH, R G = 25 W )
Y
= Year
Thermal Resistance
° C/W
WW
= Work Week
Junction?to?Case
Junction?to?Ambient (Note 1)
Junction?to?Ambient (Note 2)
R q JC
R q JA
R q JA
3.75
100
71.4
5P06V
G
= Device Code
= Pb?Free Package
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 seconds
T L
260
° C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR?4 board using the 0.5 sq in drain pad size.
Device
MTD5P06V
MTD5P06VT4
MTD5P06VT4G
Package
DPAK
DPAK
DPAK
Shipping ?
75 Units/Rail
2500/Tape & Reel
2500/Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
July, 2006 ? Rev. 6
1
Publication Order Number:
MTD5P06V/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD5P06VT4G | 功能描述:MOSFET PFET DPAK 60V 5A 450mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD5P06VT4G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MTD5P06VT4GV | 功能描述:MOSFET Single P-Ch 60V 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6000PT | 制造商:MARKTECH 制造商全称:Marktech Corporate 功能描述:Photo Transistor |
| MTD6000PTT | 制造商:MARKTECH 制造商全称:Marktech Corporate 功能描述:Peak Sensitivity Wavelength: 880nm |
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