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参数资料
| 型号： | MTD6N15T4GV |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC NFET 150V 6A 300MO DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 25V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
MTD6N15
Power Field Effect Transistor
DPAK for Surface Mount
N ? Channel Enhancement ? Mode Silicon Gate
This Power FET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers.
http://onsemi.com
Features
? Silicon Gate for Fast Switching Speeds
? Low R DS(on) — 0.3 W Max
? Rugged — SOA is Power Dissipation Limited
? Source ? to ? Drain Diode Characterized for Use With Inductive Loads
? Low Drive Requirement — V GS(th) = 4.0 V Max
? Surface Mount Package on 16 mm Tape
? Pb ? Free Package is Available
V (BR)DSS
150 V
G
R DS(on) MAX
0.3 W
N ? CHANNEL
D
I D MAX
6.0 A
MAXIMUM RATINGS
S
Rating
Symbol
Value
Unit
4
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1.0 M W )
V DSS
V DGR
150
150
Vdc
Vdc
1 2
3
Gate ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 50 m s)
Drain Current ? Continuous
Drain Current ? Pulsed
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C
(Note 1)
Derate above 25 ° C (Note 2)
V GS
V GSM
I D
I DM
P D
P D
P D
± 20
± 40
6.0
20
20
0.16
1.25
0.01
1.75
0.014
Vdc
Vpk
Adc
W
W/ ° C
W
W/ ° C
W
W/ ° C
CASE 369C
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
T J , T stg
? 65 to +150
° C
1
Gate
2
Drain
3
Source
Characteristic Symbol Value Unit
Thermal Resistance ° C/W
? Junction ? to ? Case R q JC 6.25
? Junction ? to ? Ambient (Note 1) R q JA 100
? Junction ? to ? Ambient (Note 2) R q JA 71.4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
Y = Year
WW = Work Week
6N15 = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
MTD6N15T4 DPAK 2500/Tape & Reel
MTD6N15T4G DPAK 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
May, 2013 ? Rev. 5
1
Publication Order Number:
MTD6N15/D
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