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参数资料
| 型号： | MTM76320 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1900 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, WSMINI6-F1, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 292K |
| 代理商： | MTM76320 |
Silicon MOS FETs (Small Signal)
Publication date: September 2009
SJF00082BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM76320
Silicon N-channel MOS FET (FET1)
Silicon P-channel MOS FET (FET2)
For DC-DC converter circuits
For switching circuits
Overview
MTM76320 is the composite MOS FET (N-channel and P-channel MOS
FET) that is highly suitable for DC-DC converter and other switching circuits.
Features
N-channel + P-channel MOS FET in one package
Low ON resistance (N-ch./P-ch.):
Ron = 80 mW/100 mW (VGS = 4.0 V/–4.0 V)
Small package: WSMini6-F1-B (2.1 mm × 2.0 mm × 0.7 mm)
Low drive voltage: 2.5 V drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
FET1
(N-ch.)
Drain-source surrender voltage
VDSS
20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
1.9
A
Peak drain current
IDP
12
A
FET2
(P-ch.)
Drain-source surrender voltage
VDSS
–20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
–1.2
A
Peak drain current
IDP
–7
A
Overall
Total power dissipation *
PD
700
mW
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
-
55 to +150
°
C
Note) *: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
PD absolute maximum rating without a heat shink: 150 mW
Package
Code
WSMini6-F1-B
Pin Name
1. Source (FET1)
4. Source (FET2)
2. Gate (FET1)
5. Gate (FET2)
3. Drain (FET2)
6. Drain (FET1)
Marking Symbo: JB
Internal Connection
3
(D2)
(S2)
4
1
(S1)
2
(G1)
FET1
FET2
(D1)
6
(G2)
5
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