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参数资料
型号： MTM76320
厂商： PANASONIC CORP
元件分类： 小信号晶体管
英文描述： 1900 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装： ROHS COMPLIANT, WSMINI6-F1, 6 PIN
文件页数： 2/4页
文件大小： 292K
代理商： MTM76320
MTM76320
2
SJF00082BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET1 (N-ch.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 1 mA, VGS = 0
20
V
Drain-source cutoff current
IDSS
VDS = 20 V, VGS = 0
1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8.0 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 10 V
0.4
0.85
1.3
V
Drain-source ON resistance 1 *1
RDS(on) 1 ID = 1 A, VGS = 4.0 V
80
105
mW
Drain-source ON resistance 2 *1
RDS(on) 2 ID = 0.5 A, VGS = 2.5 V
100
150
mW
Forward transfer admittance *1
Yfs ID = 1.0 A, VDS = 10 V
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
280
pF
Short-circuit output capacitance (Common source)
Coss
18
pF
Reverse transfer capacitance (Common source)
Crss
17
pF
Turn-on time *2
ton
VDD = 10 V, VGS = 0 V to 4 V, ID = 1 A
12
ns
Turn-off time *2
toff
VDD = 10 V, VGS = 4 V to 0 V, ID = 1 A
50
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Test circuit
VCC = 10 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1 A
RL = 10
VOUT
VIN
D
G
S
VIN
50
ton
toff
4 V
0 V
VIN
VOUT
10%
90%
10%
FET2 (P-ch.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = -1 mA, VGS = 0
-
20
V
Drain-source cutoff current
IDSS
VDS = -20 V, VGS = 0
-
1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8.0 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = -1.0 mA, VDS = -10 V
-
0.4
-
0.85
-
1.3
V
Drain-source ON resistance 1 *1
RDS(on) 1 ID = -1 A, VGS = -4.0 V
100
130
mW
Drain-source ON resistance 2 *1
RDS(on) 2 ID = - 0.6 A, VGS = -2.5 V
130
200
mW
Forward transfer admittance *1
Yfs ID = -1.0 A, VDS = -10 V
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
440
pF
Short-circuit output capacitance (Common source)
Coss
40
pF
Reverse transfer capacitance (Common source)
Crss
38
pF
Turn-on time *2
ton
VDD =-10V,VGS =0Vto-4V,ID =-1A
35
ns
Turn-off time *2
toff
VDD =-10V,VGS =-4Vto0V,ID =-1A
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Test circuit
VCC = 10 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1 A
RL = 10
VOUT
VIN
D
G
S
VIN
50
ton
toff
0 V
4 V
VIN
VOUT
10%
90%
10%
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