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参数资料
| 型号： | MTP10N10E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 2/8页 |
| 文件大小： | 237K |
| 代理商： | MTP10N10E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
V(BR)DSS
100
—
Vdc
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = 0.8 Rated VDSS, VGS = 0, TJ = 125
°
C)
IDSS
—
—
10
80
μ
A
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSF
IGSSR
—
100
nAdc
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
TJ = 100
°
C
VGS(th)
2.0
1.5
4.5
4.0
Vdc
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
Drain–Source On–Voltage (VGS = 10 V)
(ID = 10 Adc)
°
(ID = 5.0 Adc, TJ = 100
°
C)
RDS(on)
VDS(on)
—
0.25
Ohm
—
—
2.7
2.4
Vdc
Forward Transconductance (VDS = 15 V, ID = 5.0 A)
gFS
4.0
—
mhos
DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Unclamped Drain–to–Source Avalanche Energy See Figures 14 and 15
(ID = 25 A, VDD = 25 V, TC = 25
°
C, Single Pulse, Non–repetitive)
(ID = 10 A, VDD = 25 V, TC = 25
°
C, P.W.
≤
200
μ
s, Duty Cycle
≤
1%)
(ID = 4.0 A, VDD = 25 V, TC = 100
°
C, P.W.
≤
200
μ
s, Duty Cycle
≤
1%)
WDSR
—
—
—
60
100
40
mJ
DYNAMIC CHARACTERISTICS
Input Capacitance
See Figure 16
Ciss
Coss
Crss
—
600
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
—
400
Reverse Transfer Capacitance
—
100
SWITCHING CHARACTERISTICS*
(TJ = 100
°
C)
Turn–On Delay Time
See Figure 9
td(on)
tr
—
50
ns
Rise Time
(VDD = 25 V, ID = 5.0 A,
RG = 50
)
—
80
Turn–Off Delay Time
td(off)
tf
Qg
Qgs
Qgd
—
100
Fall Time
—
80
Total Gate Charge
See Figures 17 and 18
15 (Typ)
30
nC
Gate–Source Charge
(VDS = 0.8 Rated VDSS,
ID = Rated ID, VGS = 10 V)
8.0 (Typ)
—
Gate–Drain Charge
7.0 (Typ)
—
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
VGS = 0)
VSD
ton
trr
1.4 (Typ)
1.7
Vdc
Forward Turn–On Time
(IS = Rated ID
Limited by stray inductance
Reverse Recovery Time
70 (Typ)
—
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
″
(Measured from the drain lead 0.25
″
from package to center of die)
Ld
3.5 (Typ)
4.5 (Typ)
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
Ls
7.5 (Typ)
—
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP10N10EL | 功能描述:MOSFET 100V 10A Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10ELG | 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10M | 制造商:Motorola Inc 功能描述: |
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