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参数资料
| 型号： | MTP10N10E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 5/8页 |
| 文件大小： | 237K |
| 代理商： | MTP10N10E |
Figure 12. Commutating Safe Operating Area (CSOA)
0
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
40
60
80
30
25
20
15
0
10
+
+
–
Figure 13. Commutating Safe Operating Area
Test Circuit
VR
VGS
IFM
20 V
RGS
DUT
IS
Li
VR = 80% OF RATED VDS
VdsL = Vf + Li
dls/dt
–
dIs/dt
≤
400 A/
μ
s
100
120
I
5
Figure 14. Unclamped Inductive Switching
Test Circuit
Figure 15. Unclamped Inductive Switching
Waveforms
t
L
VDS
ID
VDD
tP
V(BR)DSS
VDD
ID(t)
C
4700
μ
F
250 V
RGS
50
IO
Vds(t)
t, (TIME)
WDSR
1
2
L IO2
V(BR)DSS
V(BR)DSS– VDD
VDS
5
Motorola TMOS Power MOSFET Transistor Device Data
COMMUTATING SAFE OPERATING AREA (CSOA)
The Commutating Safe Operating Area (CSOA) of Figure
12 defines the limits of safe operation for commutated
source-drain current versus re-applied drain voltage when
the source-drain diode has undergone forward bias. The
curve shows the limitations of IFM and peak VDS for a given
rate of change of source current. It is applicable when wave-
forms similar to those of Figure 11 are present. Full or half-
bridge PWM DC motor controllers are common applications
requiring CSOA data.
Device stresses increase with increasing rate of change of
source current so dIs/dt is specified with a maximum value.
Higher values of dIs/dt require an appropriate derating of IFM,
peak VDS or both. Ultimately dIs/dt is limited primarily by de-
vice, package, and circuit impedances. Maximum device
stress occurs during trr as the diode goes from conduction to
reverse blocking.
VDS(pk) is the peak drain–to–source voltage that the device
must sustain during commutation; IFM is the maximum for-
ward source-drain diode current just prior to the onset of
commutation.
VR is specified at 80% of V(BR)DSS to ensure that the
CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only
a second order effect on CSOA.
Stray inductances in Motorola’s test circuit are assumed to
be practical minimums. dVDS/dt in excess of 10 V/ns was at-
tained with dIs/dt of 400 A/
μ
s.
Figure 11. Commutating Waveforms
15 V
VGS
0
90%
IFM
dls/dt
IS
10%
trr
IRM
ton
VDS
Vf
VdsL
dVDS/dt
VDS(pk)
MAX. CSOA
STRESS AREA
VR
0.25 IRM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP10N10EL | 功能描述:MOSFET 100V 10A Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10ELG | 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10M | 制造商:Motorola Inc 功能描述: |
| MTP10N15 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
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