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参数资料
| 型号： | MTP10N10E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 8/8页 |
| 文件大小： | 237K |
| 代理商： | MTP10N10E |
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Motorola TMOS Power MOSFET Transistor Device Data
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相关PDF资料 |
PDF描述 |
|---|---|
| MTP12N05E | POWER FIELD EFFECT TRANSISTOR |
| MTP12N10E | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
| MTP1N60E | TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM |
| MTP1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP10N10EL | 功能描述:MOSFET 100V 10A Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10ELG | 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10M | 制造商:Motorola Inc 功能描述: |
| MTP10N15 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
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