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参数资料
| 型号： | MTP12N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-06, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 204K |
| 代理商： | MTP12N10E |
http://onsemi.com
1
Designer’s
Data Sheet
TMOS EFET.
Power Field Effect Transistor
NChannel EnhancementMode Silicon
Gate
This advanced TMOS EFET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Designed to Eliminate the Need for External Zener Transient
Suppressor — Absorbs High Energy in the Avalanche Mode
Commutating Safe Operating Area (CSOA) Specified for Use in Half
and Full Bridge Circuits
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GateSource Voltage — Continuous
GateSource Voltage — Single Pulse (tp ≤ 50 s)
VGS
±20
±40
Vdc
Drain Current — Continuous
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
12
30
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
79
0.53
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ ≤ 175°C)
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, L = 4.03 mH, RG = 25 , Peak IL = 12 A)
(See Figures 15, 16 and 17)
EAS
290
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
°
RθJC
RθJA
1.9
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EFET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTP12N10E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MTP12N10E
TMOS POWER FET
12 AMPERES
100 VOLTS
RDS(on) = 0.16 OHM
Motorola Preferred Device
D
S
G
CASE 221A06, Style 5
TO220AB
Motorola, Inc. 1996
REV XXX
相关PDF资料 |
PDF描述 |
|---|---|
| MTP12N10L | 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12N20 | 12 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12P05 | 12 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTM12P05 | 12 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| MTM12P08 | 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP12N18 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12N20 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP12P10 | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP12P10G | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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