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参数资料
| 型号： | MTP12N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-06, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 204K |
| 代理商： | MTP12N10E |
MTP12N10E
http://onsemi.com
7
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 14. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
VGS
VDS
VDS = 0 V
VGS = 0 V
0
Ciss
Coss
Crss
2000
1500
1000
500
60
45
30
15
0
15
Figure 15. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
300
0
25
50
250
200
150
100
50
75
100
125
150
1
PEAK IL = 12A
VDD = 25 V
Figure 16. Unclamped Inductive Switching
Test Circuit
Figure 17. Unclamped Inductive Switching
Waveforms
t
L
RG
VDS
IL
VDD
tP
BVDSS
VDD
IL(t)
t, (TIME)
,SINGLE
PULSE
A
V
ALANCHE
ENERGY
(mJ
E AS
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
12 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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