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参数资料
| 型号： | MTP12N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-06, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 204K |
| 代理商： | MTP12N10E |
MTP12N10E
http://onsemi.com
4
SAFE OPERATING AREA INFORMATION
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum draintosource
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of
linear systems. The curves are based on a case
temperature of 25
°C and a maximum junction temperature
of 175
°C. Limitations for repetitive pulses at various case
temperatures can be determined by using the thermal
response curves. Motorola Application Note, AN569,
“Transient Thermal ResistanceGeneral Data and Its Use”
provides detailed instructions.
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 9 is
the boundary that the load line may traverse without
incurring damage to the MOSFET. The fundamental limits
are the peak current, IDM and the breakdown voltage,
BVDSS. The switching SOA shown in Figure 9 is applicable
for both turnon and turnoff of the devices for switching
times less than one microsecond.
The power averaged over a complete switching cycle
must be less than:
TJ(max) TC
RθJC
Figure 7. Resistive Switching Time
versus Gate Resistance
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
VDD = 50 V
ID = 12 A
VGS = 10 V
TJ = 25°C
tf
tr
td(off)
td(on)
100
10
1000
100
10
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP12N18 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12N20 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP12P10 | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP12P10G | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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