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参数资料
| 型号： | MTP12N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-06, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 204K |
| 代理商： | MTP12N10E |
MTP12N10E
http://onsemi.com
6
Figure 11. Commutating Waveforms
15 V
VGS
0
90%
IFM
dls/dt
IS
10%
trr
IRM
ton
VDS
Vf
VdsL
dVDS/dt
VDS(pk)
MAX. CSOA
STRESS AREA
VR
0.25 IRM
Figure 12. Commutating Safe Operating
Area (CSOA)
200
020
40
60
80
15
12
9
6
0
3
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
+
Figure 13. Commutating Safe Operating Area
Test Circuit
VR
VGS
IFM
20 V
RGS
DUT
IS
Li
VR = 80% OF RATED BVDSS
VdsL = Vf + Li dls/dt
+
TJ ≤ 175°C
IS = 12 A
dIs/dt
≤ 100 A/s
VR ≤ 100 V
100
120
140
160
180
I S
,SOURCET
ODRAIN
CURRENT
(AMPS)
VDS
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相关PDF资料 |
PDF描述 |
|---|---|
| MTP12N10L | 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12N20 | 12 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP12P05 | 12 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTM12P05 | 12 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| MTM12P08 | 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP12N18 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12N20 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP12P10 | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP12P10G | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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