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参数资料
| 型号： | MTP20N20E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 243K |
| 代理商： | MTP20N20E |
Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
MTP20N20E/D
MTP20N20E
Preferred Device
Power MOSFET
20 Amps, 200 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
200
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Continuous
Continuous @ 100°C
Single Pulse (tp ≤ 10 s)
ID
IDM
20
12
60
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 3.0 mH, RG = 25 )
EAS
600
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
1.00
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
20 AMPERES
200 VOLTS
RDS(on) = 160 m
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP20N20E
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP20N20E
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP20N20E
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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