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参数资料
| 型号： | MTP20N20E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 243K |
| 代理商： | MTP20N20E |
MTP20N20E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
246
8
10
30
40
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
8
16
24
32
0.05
0.15
0.25
0.35
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.4
0.8
1.2
0
100
1
100
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
20
13
5
7
9
10
5 V
6 V
7 V
VGS = 10 V
2.0
3.0
4.0
5.0
6.0
7.5
2.5
3.5
4.5
5.5
6.5
8.5
0.30
0.20
0.10
412
20
28
36
50
150
200
0
25
35
40
20
30
10
0
40
0.10
0.11
0.13
0.15
0.17
0.16
0.14
0.12
0
8
16
24
32
4
1220
2836
40
VGS = 10 V
15 V
25°C
9 V
100°C
5
15
1000
10
2.0
1.6
7.0
8.0
TJ = 125°C
2.4
8 V
55°C
25°C
TJ = 100°C
VGS = 10 V
ID = 10 A
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