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参数资料
| 型号： | MTP20N20E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 243K |
| 代理商： | MTP20N20E |
MTP20N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
263
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
0.12
0.16
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
3.84
3.36
Vdc
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)
gFS
8.0
11
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd V
0 Vd
Ciss
1880
2700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
378
535
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
68
100
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
17
40
ns
Rise Time
(VDD = 100 Vdc, ID = 20 Adc,
VGS = 10 Vdc
tr
86
180
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
50
100
Fall Time
RG 9.1 )
tf
60
120
Gate Charge
(See Fig e 8)
QT
54
75
nC
(See Figure 8)
(VDS = 160 Vdc, ID = 20 Adc,
Q1
12
(VDS 160 Vdc, ID 20 Adc,
VGS = 10 Vdc)
Q2
24
Q3
22
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1.0
0.82
1.35
Vdc
Reverse Recovery Time
(See Fig re 14)
trr
239
ns
(See Figure 14)
(I
20 Adc V
0 Vdc
ta
136
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
103
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
2.09
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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