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| 型号： | MTP2955V |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 12A TO-220AB |
| 产品变化通告： | Product Discontinuation 30/Jun/2004 |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 770pF @ 25V |
| 功率 - 最大： | 60W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP2955VOS |
MTP2955V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
P ? Channel TO ? 220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
? Pb ? Free Package is Available*
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
12 AMPERES, 60 VOLTS
R DS(on) = 230 m W
P ? Channel
D
G
S
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Symbol
V DSS
V DGR
Value
60
60
Unit
Vdc
Vdc
MARKING DIAGRAM
AND PIN ASSIGNMENT
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 10 m s)
V GS
V GSM
± 15
± 25
Vdc
Vpk
4
4
Drain
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 12 Apk, L = 3.0 mH, R G = 25 W )
I D
I D
I DM
P D
T J , T stg
E AS
12
8.0
42
60
0.40
? 55 to 175
216
Adc
Apk
W
W/ ° C
° C
mJ
1
2
3
TO ? 220AB
CASE 221A
STYLE 5
MTP2955VG
AYWW
1
3
Gate
Source
2
Drain
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JC
R q JA
T L
2.5
62.5
260
° C/W
° C
MTP2955V
A
Y
WW
G
= Device Code
= Location Code
= Year
= Work Week
= Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping
MTP2955V
MTP2955VG
TO ? 220AB
TO ? 220AB
(Pb ? Free)
50 Units/Rail
50 Units/Rail
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 7
1
Publication Order Number:
MTP2955V/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP2955V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP29N15E | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 29 Amps, 150 Volts N-Channel TO-220 |
| MTP2H-E10-C | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP2H-E10-C39 | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP2H-E6-C | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
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