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参数资料
| 型号： | MTP29N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 115K |
| 代理商： | MTP29N15E |
MTP29N15E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
10
20
60
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
28
0
30
50
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
020
0
0.10
0.14
020
10
60
0.07
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Drain Current and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.25
0
20
40
160
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
-55°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 14.5 A
35
40
60
15 V
-50
-25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
60
80
100°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
012
5
4
610
30
10
40
60
0.045
0.04
0.5
0
0.1
0.02
30
25°C
3
7
TJ = 25°C
8 V
9 V
4
20
25°C
30
50
40
0.05
0.055
0.06
0.065
7 V
6.5 V
VGS = 10 V
5.5 V
5 V
4.5 V
4 V
89
40
50
6 V
67
0.04
0.06
0.08
0.12
TJ = 100°C
25°C
-55°C
50
2.0
1.75
1.25
0.75
0.25
100
120
140
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相关代理商/技术参数 |
参数描述 |
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| MTP2H-E6-C | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
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| MTP2N35 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 2.25A, 350-400V |
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