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参数资料
| 型号： | MTP3055V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 202K |
| 代理商： | MTP3055V |
MTP3055V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
65
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.7
5.4
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
0.10
0.15
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150°C)
VDS(on)
1.3
2.2
1.9
Vdc
Forward Transconductance (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS
4.0
5.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
410
500
pF
Output Capacitance
Coss
130
180
Reverse Transfer Capacitance
Crss
25
50
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
7.0
10
ns
Rise Time
tr
34
60
TurnOff Delay Time
td(off)
17
30
Fall Time
tf
18
50
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
QT
12.2
17
nC
Q1
3.2
Q2
5.2
Q3
5.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.0
0.91
1.6
Vdc
Reverse Recovery Time
(See Figure 15)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
56
ns
ta
40
tb
16
Reverse Recovery Stored
Charge
QRR
0.128
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP3055V | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| MTP3055V_L86Z | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP3055VL | 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP3055VL | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 60V 12A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 12A, TO-220 |
| MTP3055VL_Q | 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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