参数资料
型号: MTP3055V
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 3/7页
文件大小: 202K
代理商: MTP3055V
MTP3055V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
4
5
0
8
16
24
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
24
6
8
10
0
8
16
24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
04
8
16
24
0
0.10
0.20
0.30
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
8
20
24
0.08
0.09
0.13
0.15
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.2
1.6
020
50
60
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 6 A
9 V
8 V
6 V
5 V
4 V
7 V
4
12
20
35
79
4
12
20
VGS = 10 V
TJ = 100°C
25°C
55°C
12
20
4
12
16
10
30
40
0.05
0.15
0.25
0.10
0.12
0.14
0.11
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
相关PDF资料
PDF描述
MTP3055VG 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP30P06V 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP35N06ZL 35 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP36N06V 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N08L 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
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