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参数资料
| 型号： | MTP8N50E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 110K |
| 代理商： | MTP8N50E |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MTP8N50E/D
TMOS EFET.
Power Field Effect Transistor
NChannel EnhancementMode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced TMOS EFET is
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, converters, PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
500
Vdc
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive (tp
≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
ID
IDM
8.0
5.0
32
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
125
1.0
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W)
EAS
510
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RqJC
RqJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 5 sec.
TL
260
°C
MTP8N50E
TMOS POWER FET
8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM
D
S
G
CASE 221A09, Style 5
TO-220AB
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