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参数资料
| 型号： | MTP8N50E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 110K |
| 代理商： | MTP8N50E |
MTP8N50E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
500
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
250
1000
mAdc
GateBody Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
6.3
4.0
—
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 4.0 Adc)
RDS(on)
—
0.6
0.8
Ohms
DraintoSource OnVoltage (VGS = 10 Vdc)
(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125°C)
VDS(on)
—
5.0
—
7.2
6.4
Vdc
Forward Transconductance
(VDS = 15 Vdc, ID = 4.0 Adc)
gFS
4.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
1450
1680
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
190
246
Transfer Capacitance
f = 1.0 MHz)
Crss
—
45.4
144
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
td(on)
—
15
50
ns
Rise Time
(R
+ C17n
9 1
W)
tr
—
33
72
TurnOff Delay Time
(Rgo + C17n = 9.1 W)
td(off)
—
40
150
Fall Time
tf
—
32
60
Gate Charge
(Fi
8)
QT
—
40
64
nC
(see Figure 8)
(VDS = 400 Vdc, ID = 8.0 Adc,
Q1
—
8.0
—
(VDS
400 Vdc, ID
8.0 Adc,
VGS = 10 Vdc)
Q2
—
17
—
Q3
—
17.3
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
VSD
Vdc
Forward On Voltage
(IS = 8.0 Adc, VGS = 0 Vdc)
(I
80Ad
V
0Vd
T
125
°C)
VSD
—
1.2
2.0
Vdc
S
GS
(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C)
—
1.1
—
Reverse Recovery Time
trr
—
320
—
ns
(IS = 8.0 Adc, VGS = 0 Vdc,
ta
—
179
—
(IS
8.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/ms)
tb
—
141
—
Reverse Recovery Stored Charge
QRR
—
3.0
—
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
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