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参数资料
| 型号： | MTW16N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 400 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 118K |
| 代理商： | MTW16N40E |
MTW16N40E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
420
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 320 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.25
1.0
mAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 8.0 Adc)
RDS(on)
0.225
0.24
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125°C)
VDS(on)
4.8
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
gFS
8.0
10
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
2570
3600
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
330
460
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
82
164
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
29
50
ns
Rise Time
(VDD = 200 Vdc, ID = 16 Adc,
VGS =10Vdc
tr
62
70
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
76
170
Fall Time
RG
9.1
)
tf
57
95
Gate Charge
(See Figure 8)
QT
66
93
nC
(VDS = 320 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
Q1
17
VGS = 10 Vdc)
Q2
31
Q3
30
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1.0
0.9
1.6
Vdc
Reverse Recovery Time
(S
Fi
9)
trr
340
ns
(See Figure 9)
(I
16 Adc V
0 Vdc
ta
228
(IS = 16 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
112
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
4.3
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
5.0
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MTW20N50E | 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
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| MTW32N25E | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
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| MTW35N15E | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW206N | 制造商:Knitter-Switch 功能描述:Bulk |
| MTW20N20E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTW20N50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
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