参数资料
型号: MTW16N40E
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 16 A, 400 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
封装: CASE 340K-01, 3 PIN
文件页数: 3/8页
文件大小: 118K
代理商: MTW16N40E
MTW16N40E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
04
8
12
16
20
25
30
15
2
6
10
14
18
5
7 V
6 V
VGS = 10 V
VDS = 50 V
04
6
28
25
35
40
20
30
10
0
TJ = 55°C
25°C
100°C
5
15
TJ = 25°C
VGS = 10 V
15 V
0.20
0.32
0.24
08
32
428
VGS = 0 V
0
200
400
100
300
350
1.0
50
TJ = 125°C
0
5
15
25
0
0.45
0.75
0.6
0.3
0.15
10
20
30
TJ = 100°C
25°C
55°C
VGS = 10 V
50
0
0.5
1.0
2.0
3.0
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 8 A
4.5 V
20
10
1000
0.26
0.28
0.30
0.22
12
20
16
24
2.5
1.5
0
100°C
6.5 V
8 V
250
150
相关PDF资料
PDF描述
MTW20N50E 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
MTW24N40E 24 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
MTW32N25E 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
MTW35N15EG 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
MTW35N15E 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
相关代理商/技术参数
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MTW23N25E 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
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