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参数资料
| 型号： | MTW24N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 24 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 168K |
| 代理商： | MTW24N40E |
MTW24N40E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
360
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 12 Adc)
RDS(on)
0.13
0.16
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 24 Adc)
(ID = 12 Adc, TJ =125°C)
VDS(on)
4.5
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)
gFS
11
17
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
4000
5600
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
530
740
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
112
220
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
32
60
ns
Rise Time
(VDD 200= Vdc, ID = 24 Adc,
VGS =10Vdc
tr
96
204
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
99
194
Fall Time
RG
9.1
)
tf
92
186
Gate Charge
(See Figure 8)
QT
98
160
nC
(VDS = 320 Vdc, ID = 24 Adc,
VGS = 10 Vdc)
Q1
24
VGS = 10 Vdc)
Q2
38
Q3
40
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 24 Adc, VGS = 0 Vdc)
(IS = 24 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.94
0.9
1.5
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
372
ns
(See Figure 14)
(I
24 Adc V
0 Vdc
ta
244
(IS = 24 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
128
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
5.3
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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