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参数资料
| 型号： | MTW24N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 24 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 168K |
| 代理商： | MTW24N40E |
MTW24N40E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
1020
304050
0
2.0
4.0
6.0
8.0
10
0
20
30
40
50
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.0
3.5
4.0
4.5
5.0
0
20
30
40
50
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
102030
4050
0
0.1
0.2
0.3
0.4
0.12
0.13
0.15
0.17
0.19
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
1.0
2.0
2.5
3.0
0
100
200
300
400
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
VGS = 0 V
VGS = 10 V
ID = 12 A
TJ = 25°C
10
9 V
8 V
7 V
6 V
5 V
4 V
VGS = 10 V
VDS ≥ 10 V
100°C
25°C
TJ = 55°C
10
5.5
6.0
6.5
7.0
2.5
0.05
0.15
0.25
0.35
TJ = 100°C
25°C
55°C
VGS = 10 V
0.14
0.16
0.18
TJ = 25°C
VGS = 10 V
0.5
1.5
TJ = 125°C
100°C
25°C
15 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
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