参数资料
型号: MUBW75-12T8
厂商: IXYS
文件页数: 2/7页
文件大小: 0K
描述: MODULE IGBT CBI E3
标准包装: 5
IGBT 类型: 沟道
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.15V @ 15V,75A
电流 - 集电极 (Ic)(最大): 110A
电流 - 集电极截止(最大): 4mA
Vce 时的输入电容 (Cies): 5.35nF @ 25V
功率 - 最大: 355W
输入: 三相桥式整流器
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: E3
供应商设备封装: E3
MUBW 75-12 T8
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V CES
V GES
I C25
I C80
I CM
P tot
T VJ = 25°C to  50°C
Continuous
T C = 25°C
T C = 80°C
T C = 80°C; t p =   ms
T C = 25°C
 200
± 20
  0
75
 50
355
V
V
A
A
A
W
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min.
typ.
max.
V CE(sat)
V GE(th)
I CES
I C = 75 A; V GE =  5 V  
 
I C = 3 mA; V GE = V CE
V CE = V CES ; V GE = 0 V  
T VJ = 25°C
T VJ =  25°C
T VJ = 25°C
T VJ =  25°C
5
 .7
2.0
5.8
 
2. 5
6.5
4
V
V
V
mA
mA
I GES
C ies
Q Gon
t d(on)
t r
t d(off)
t f
E on
E off
RBSOA
t SC
(SCSOA)
R thJC
V CE = 0 V; V GE = ± 20 V
V CE = 25 V; V GE = 0 V; f =   MHz
V CE = 600 V; V GE =  5 V; I C = 75 A
Inductive load, T VJ =  25°C
V CE = 600 V; I C = 75 A
V GE = ± 5 V; R G = 4.7 ?
I C = I CM ; V GE =  5 V
R G = 4.7 ? ; T VJ =  25°C
V CE = 720 V; V GE = ±  5 V; R G = 4.7 ?
t P <  0 μs; non-repetitive; T VJ =  25°C
400
5.35
700
290
50
520
90
7
9.5
V CEK < V CES - L S di/dt
300
0.35
nA
nF
nC
ns
ns
ns
ns
mJ
mJ
V
A
K/W
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I F25
I F80
T C = 25°C
T C = 80°C
 55
75
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V F
I F = 75 A;  
 
T VJ = 25°C
T VJ =  25°C
2. 
 .6
2.6
V
V
I RM
Q rr
t rr
E rec
R thJC
I F = 75 A; di F /dt = - 500 A/μs;
T VJ =  25°C; V R = 600 V; V GE = 0 V
(per diode)
 35
 5
 60
6
0.4
A
μC
ns
mJ
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2006 IXYS All rights reserved
2-7
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