参数资料
型号: MUN5135T3
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SC-70, 3 PIN
文件页数: 1/12页
文件大小: 196K
代理商: MUN5135T3
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25
°C
PD
150
1.2
mW
mW/
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1 (2.)
MUN5116T1 (2.)
MUN5130T1 (2.)
MUN5131T1 (2.)
MUN5132T1 (2.)
MUN5133T1 (2.)
MUN5134T1 (2.)
MUN5135T1 (2.)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
6M
10
22
47
10
4.7
1.0
2.2
4.7
22
2.2
10
22
47
1.0
2.2
4.7
47
3000/Tape & Reel
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
CASE 419
SC–70/SOT–323
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
相关PDF资料
PDF描述
MUN5114T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5111T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5131T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5115T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5112T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MUN5136 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN5136DW 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon
MUN5136DW1T1 功能描述:TRANS BRT PNP DUAL 50V SOT363 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN,1 个 PNP - 预偏压式(双) 电流 - 集电极 (Ic)(最大):70mA,100mA 电压 - 集电极发射极击穿(最大):50V 电阻器 - 基极 (R1)(欧):47k,2.2k 电阻器 - 发射极 (R2)(欧):47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA,5V Ib、Ic条件下的Vce饱和度(最大):300mV @ 500µA,10mA 电流 - 集电极截止(最大):- 频率 - 转换:100MHz,200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP,SC-88,SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046
MUN5136DW1T1G 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel
MUN5136T1 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)(最大):100mA 电压 - 集电极发射极击穿(最大):50V 电阻器 - 基极 (R1)(欧):47k 电阻器 - 发射极 (R2)(欧):47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA,5V Ib、Ic条件下的Vce饱和度(最大):300mV @ 500µA,10mA 电流 - 集电极截止(最大):- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70,SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242