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参数资料
| 型号： | MUN5135T3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 196K |
| 代理商： | MUN5135T3 |
MUN5111T1 SERIES
http://onsemi.com
8
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
mm
inches
0.035
0.9
0.075
0.7
1.9
0.028
0.65
0.025
0.65
0.025
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a
function of the pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
device is determined by TJ(max), the maximum rated
junction temperature of the die, RθJA, the thermal
resistance from the device junction to ambient; and the
operating temperature, TA. Using the values provided on
the data sheet, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150
°C – 25°C
= 150 milliwatts
833
°C/W
The 833
°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
. Using a board material such
as Thermal Clad, a power dissipation of 300 milliwatts can
be achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10
°C.
The soldering temperature and time should not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5
°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN5136 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5136DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5136DW1T1 | 功能描述:TRANS BRT PNP DUAL 50V SOT363 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN，1 个 PNP - 预偏压式（双） 电流 - 集电极 (Ic)（最大）:70mA，100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k，2.2k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz，200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046 |
| MUN5136DW1T1G | 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel |
| MUN5136T1 | 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242 |
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