- 您现在的位置：买卖IC网 > PDF目录20505 > MURHB860CTT4G (ON Semiconductor)DIODE ULTRA FAST 4A 600V D2PAK PDF资料下载
参数资料
| 型号： | MURHB860CTT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 114K |
| 描述： | DIODE ULTRA FAST 4A 600V D2PAK |
| 产品目录绘图： | Rectifier D2PAK Pkg |
| 标准包装： | 1 |
| 系列： | MEGAHERTZ™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 2.8V @ 4A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 600V |
| 电流 - 平均整流 (Io)（每个二极管）： | 4A |
| 电压 - (Vr)（最大）： | 600V |
| 反向恢复时间(trr)： | 35ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 标准包装 |
| 其它名称： | MURHB860CTT4GOSDKR |
?
Semiconductor Components Industries, LLC, 2011
August, 2011 ?
Rev. 3
1
Publication Order Number:
MURHB860CT/D
MURHB860CT
Power Rectifier
D2PAK Power Surface Mount Package
Designed for use in switching power supplies, inverters and as free
wheeling diodes, these state?of?the?art devices have the following
features:
Features
?
Package Designed for Power Surface Mount Applications
?
Ultrafast 35 Nanosecond Recovery Times
?
175°C Operating Junction Temperature
?
Epoxy Meets UL 94 V?0 @ 0.125 in
?
High Temperature Glass Passivated Junction
?
High Voltage Capability to 600 V
?
Low Leakage Specified @ 150°C Case Temperature
?
Short Heat Sink Tab Manufactured — Not Sheared!
?
Similar in Size to Industry Standard TO?220 Package
?
Case: Epoxy, Molded
?
Weight: 1.7 grams (approximately)
?
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
?
Pb?Free Packages are Available
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC
= 120
°C) Total Device
IF(AV)
4.0
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz,
TC
= 120
°C)
IFM
8.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single Phase,
60 Hz)
IFSM
100
A
Operating Junction and Storage
Temperature Range
TJ, Tstg
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package Shipping?
ORDERING INFORMATION
MURHB860CT D2PAK
D2PAK
CASE 418B
STYLE 3
50 Units/Rail
3
4
1
ULTRAFAST RECTIFIER
8.0 AMPERES, 600 VOLTS
1
3
4
MURHB860CTT4 D2PAK 800/Tape & Reel
MARKING DIAGRAM
MURHB860CTT4G D2PAK
(Pb?Free)
800/Tape & Reel
MURHB860CTG D2PAK
(Pb?Free)
50 Units/Rail
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
AKA = Diode Polarity
http://onsemi.com
AY WW
UH860G
AKA
相关PDF资料 |
PDF描述 |
|---|---|
| BAV74_D87Z | DIODE DUAL IN 50V 200MA SOT-23 |
| IXDD404SI-16 | IC MOSFET DRVR LS 4A DUAL 16SOIC |
| BAV70_D87Z | DIODE DUAL IN 70V 200MA SOT-23 |
| A7SSG-5010G | DSUB CABL-AFM50G/ AE50G / AFM50G |
| TC428MJA | IC MOSFET DVR 1.5A DUAL HS 8CDIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MURHD560T4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MEGAHERTZ TM Power Rectifier |
| MURHD560T4_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MEGAHERTZ Power Rectifier |
| MURHD560T4_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MEGAHERTZ? Power Rectifier |
| MURHD560T4G | 功能描述:整流器 MHz FAST RECTIFIER 5A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURHD560W1T4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MEGAHERTZ Power Rectifier |
发布紧急采购，3分钟左右您将得到回复。