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参数资料
| 型号： | MW6S010GNR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/20页 |
| 文件大小： | 725K |
| 描述： | MOSFET RF N-CH 28V 10W TO270-2GW |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 18dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 125mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270BB |
| 供应商设备封装： | TO-270 WB-4 鸥翼形 |
| 包装： | 标准包装 |
| 其它名称： | MW6S010GNR1DKR |
MW6S010NR1 MW6S010GNR1
19
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Dec. 2008
?
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C in
Capable Plastic Package bullet, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q)
and added ?Measured in Functional
Test?, On Characteristics table, p. 2
?
Corrected Ciss
test condition to indicate AC stimulus on the V
GS
connection versus the V
DS
connection,
Dynamic Characteristics table, p. 2
?
Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part
numbers, p. 3, 9
?
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 13-15. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
?
Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 16-18. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3
changed from Min-Max .150-.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Added JEDEC Standard Package Number.
?
Added Product Documentation and Revision History, p. 19
5
June 2009
?
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
?
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 19
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19
相关PDF资料 |
PDF描述 |
|---|---|
| MW6S010MR1 | MOSFET RF N-CH 28V 10W TO-270-2 |
| MX3AWT-A1-R250-000D51 | LED COOL WHITE 6500K 2PLCC |
| MX3SWT-A1-0000-000DE3 | LED COOL WHITE 5000K XLAMP SMD |
| MX6AWT-A1-R250-000D51 | LED XLAMP COOL WHITE 6500K SMD |
| MX6SWT-A1-R250-000EE3 | LED WHITE SQUARE SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MW6S010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET |
| MW6S010MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MW6S010NR1 | 功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
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