参数资料
型号: MW6S010GNR1
厂商: Freescale Semiconductor
文件页数: 16/20页
文件大小: 725K
描述: MOSFET RF N-CH 28V 10W TO270-2GW
标准包装: 1
晶体管类型: LDMOS
频率: 960MHz
增益: 18dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 125mA
功率 - 输出: 10W
电压 - 额定: 68V
封装/外壳: TO-270BB
供应商设备封装: TO-270 WB-4 鸥翼形
包装: 标准包装
其它名称: MW6S010GNR1DKR
MW6S010NR1 MW6S010GNR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS ? 900 MHz
970
16
48
910
?26
?8
IRL
Gps
IMD
f, FREQUENCY (MHz)
VDD
= 28 Vdc, P
out
= 10 W (Avg.)
IDQ
= 125 mA, 100 kHz Tone Spacing
44
?10
40
?12
36
?14
32
?16
28
?18
24
?20
20
?22
920 940930 950 960
Figure 3. Two-Tone Wideband Performance
@ Pout
= 10 Watts
Pout, OUTPUT POWER (WATTS) AVG.
15
20
1
IDQ
= 190 mA
VDD
= 28 Vdc, f = 945 MHz
Two?Tone Measurements
100 kHz Tone Spacing
19
17
16
10 100
Figure 4. Two-Tone Power Gain versus
Output Power
110100
?70
?10
0.1
7th Order
VDD
= 28 Vdc, I
DQ
= 125 mA
f = 945 MHz, Two?Tone Measurements
100 kHz Tone Spacing
5th Order
3rd Order
?20
?30
?40
?50
?60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
1 10010
?55
?15
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 10 W (Avg.)
IDQ
= 125 mA, Two?Tone Measurements
(f1+f2)/2 = Center Frequency = 945 MHz
5th Order
3rd Order
?20
?25
?30
?35
?40
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
29
48
P3dB = 43.14 dBm (20.61 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 125 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 945 MHz
46
44
42
40
38
21 23 25
Actual
Ideal
27
19
Figure 7. Pulse CW Output Power versus
Input Power
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
18
90 mA
125 mA
P1dB = 42.23 dBm (16.71 W)
?50
?45
?24
0.1
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ηD
相关PDF资料
PDF描述
MW6S010MR1 MOSFET RF N-CH 28V 10W TO-270-2
MX3AWT-A1-R250-000D51 LED COOL WHITE 6500K 2PLCC
MX3SWT-A1-0000-000DE3 LED COOL WHITE 5000K XLAMP SMD
MX6AWT-A1-R250-000D51 LED XLAMP COOL WHITE 6500K SMD
MX6SWT-A1-R250-000EE3 LED WHITE SQUARE SMD
相关代理商/技术参数
参数描述
MW6S010GNR1-CUT TAPE 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET
MW6S010MR1 功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MW6S010NR1 功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MW6S010NR1_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MW6S-12A 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H