参数资料
型号: MW6S010GNR1
厂商: Freescale Semiconductor
文件页数: 17/20页
文件大小: 725K
描述: MOSFET RF N-CH 28V 10W TO270-2GW
标准包装: 1
晶体管类型: LDMOS
频率: 960MHz
增益: 18dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 125mA
功率 - 输出: 10W
电压 - 额定: 68V
封装/外壳: TO-270BB
供应商设备封装: TO-270 WB-4 鸥翼形
包装: 标准包装
其它名称: MW6S010GNR1DKR
6
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
TYPICAL CHARACTERISTICS ? 900 MHz
ACPR (dBc)
0 ?60
Pout, OUTPUT POWER (WATTS) AVG.
50
?10
40
?20
30
?30
20
?40
10
?50
0.1 1 10
Gps
ACPR
VDD= 28 Vdc
IDQ
= 125 mA
f = 945 MHz
Figure 8. Single-Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
100
15
20
0.1
0
50
TC
= ?30
C
25C
?30C
10
1
19
18
17
16
40
30
20
= 28 Vdc
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
G
ps
, POWER GAIN (dB)
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
IDQ
= 125 mA
f = 945 MHz
0122
46810
14
16
500
600
700
15
19
17
16
18
G
ps
, POWER GAIN (dB)
0
24
?25
5
20 0S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
16
?5
12 ?10
8 ?15
4
?20
1200
1100
1000
900
800
VDD
= 28 Vdc
Pout
= 10 W CW
IDQ
= 125 mA
S11 (dB)
S21 (dB)
85C
25C
85C
VDD
IDQ
= 125 mA
f = 945 MHz
VDD
= 24 V
28 V
32 V
ηD
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ηD
η
D
,
DRAIN EFFICIENCY (%)
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