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参数资料
| 型号： | MWI75-12A8 |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT SIXPACK RBSOA 1200V E3 |
| 标准包装： | 5 |
| IGBT 类型： | NPT |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 125A |
| 电流 - 集电极截止（最大）： | 5mA |
| Vce 时的输入电容 (Cies)： | 5.5nF @ 25V |
| 功率 - 最大： | 500W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E3 |
| 供应商设备封装： | E3 |
MWI 75-12A8
Ouput Inverter T1 - T6
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
1200
±20
±30
125
85
500
Unit
V
V
V
A
A
W
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 75 A; V GE = 15 V
I C = 3 MA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
4.5
2.2
2.5
3
2.6
6.5
5
V
V
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V GE = ±20 V
V CE = 25 V; V GE = 0 V; F = 1 MHZ
V CE = 600 V; V GE = 15 V; I C = 75 A
5.5
350
400
nA
nF
NC
t d(on)
t r
t d(off)
t f
E on
E off
RBSOA
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
inductive load
V CE = 600 V; I C = 75 A
V GE = ±15 V; R G = 15 W
V GE = ±15 V; R G = 15 W ;
T VJ = 125°C
T VJ = 125°C
V CEK < 1200 V
100
50
650
50
12.1
10.5
150
ns
ns
ns
ns
mJ
mJ
A
SCSOA
short circuit safe operating area
t SC
I SC
R thJC
short circuit duration
short circuit current
thermal resistance junction to case
V CE = 1200 V; V GE = ±15 V;
R G = 15 W ; NON-REPETITIVE
(PER IGBT)
T VJ = 125°C
300
10
0.25
μS
A
K/W
Output Inverter D1 - D6
Ratings
Symbol
V RRM
I F25
I F80
V F
I RM
t rr
R thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
Conditions
I F = 75 A; V GE = 0 V
V R = 600 V; I F = 75 A; V GE = 0 V
di F /DT = -750 A/μS
(PER DIODE)
T VJ = 25°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 125°C
min.
typ.
2.2
1.6
79
220
max.
1200
150
100
2.6
0.41
Unit
V
A
A
V
V
A
ns
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2009 IXYS All rights reserved
20090220b
2-6
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| MWI75-12T7T | 功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI75-12T8T | 功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI80-12T6K | 功能描述:分立半导体模块 80 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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