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参数资料
| 型号： | MX0912B251YTRAY |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | METAL CERAMIC PACKAGE-2 |
| 文件页数： | 7/12页 |
| 文件大小： | 92K |
| 代理商： | MX0912B251YTRAY |
1997 Feb 19
4
Philips Semiconductors
Product specication
NPN microwave power transistor
MX0912B251Y
THERMAL CHARACTERISTICS
Tj = 125 °C unless otherwise specied.
Notes
1. See “
Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C measured in the test jig as shown in Fig.6 and working in class C broadband
mode in pulse; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base CW
1.9
K/W
Rth mb-h
thermal resistance from mounting base to heatsink CW; note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
tp =10 s; δ = 10%
notes 1 and 2
0.28
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
ICBO
collector cut-off current
VCB =65V; IE = 0
100
mA
VCB =50V; IE = 0
10
mA
ICES
collector cut-off current
VCE =60V; RBE = 0
100
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC =0
1
mA
MODE OF OPERATION
f
(GHz)
VCC
(V)(2)
PL
(W)
Gpo
(dB)
ηC
(%)
Zi/ZL
(
)
Class C;
tp =10 s; δ = 10%
0.960 to 1.215
50
>235
typ. 275
>7
typ. 7.4
>42
typ. 47
see Figs 7 and 8
tp = 300 s; δ = 10%;
see Fig.5
1.03 to 1.09
50
typ. 280
typ. 8
typ. 48
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