参数资料
型号: MX0912B251YTRAY
厂商: NXP SEMICONDUCTORS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: METAL CERAMIC PACKAGE-2
文件页数: 9/12页
文件大小: 92K
代理商: MX0912B251YTRAY
1997 Feb 19
6
Philips Semiconductors
Product specication
NPN microwave power transistor
MX0912B251Y
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
0.65 mm diameter copper wire
total length = 12 mm;
height of loop = 9 mm
L3
4 turns 0.65 mm diameter
copper wire
int. diameter 3 mm;
L=5mm
C1
DC block
100 pF
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10
F; 50 V
C3
electrolytic capacitor
470
F; 63 V
C4
feedthrough bypass capacitor
Erie, ref. 1250-003
C5, C6
variable gigatrim capacitor
0.8 to 8 pF
Tekelec, ref. 729.1
Fig.5 Pulse definition.
handbook, full pagewidth
MGK066
300
s
1
s
1
s
3 ms
相关PDF资料
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MPS6562 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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相关代理商/技术参数
参数描述
MX0912B351Y 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN microwave power transistor
MX0912B351Y TRAY 功能描述:两极晶体管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MX0912B351Y,114 功能描述:两极晶体管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MX0912B351Y114 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN microwave power transistor
MX1 制造商:METRIX 功能描述:ANALOGUE METER 制造商:METRIX 功能描述:MULTIMETER ANALOG 8 FUNCTIONS 制造商:METRIX 功能描述:MULTIMETER, ANALOG, 8 FUNCTIONS 制造商:METRIX 功能描述:MULTIMETER, ANALOG, 8 FUNCTIONS, Voltage Measuring Range DC:150mV to 1V, Voltage