参数资料
型号: NAND01GR3B3BV1T
厂商: NUMONYX
元件分类: PROM
英文描述: 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
封装: 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件页数: 22/59页
文件大小: 998K
代理商: NAND01GR3B3BV1T
29/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 13. Status Register Bits
Note: 1. The SR6 bit and SR0 bit have a different meaning during Cache Program and Cache Read operations.
2. Only valid for Cache Program operations, for other operations it is same as SR6.
3. Only valid for Cache Program operations, for other operations it is Don’t Care.
Bit
Name
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6(1)
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
Cache Ready/Busy
'1'
Cache Register ready (Cache Program only)
'0'
Cache Register busy (Cache Program only)
SR5
Program/ Erase/ Read
Controller(2)
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR4, SR3, SR2
Reserved
Don’t Care
SR1
Cache Program Error(3)
'1'
Page N-1 failed in Cache Program operation
'0'
Page N-1 programmed successfully
SR0(1)
Generic Error
‘1’
Error – operation failed
‘0’
No Error – operation successful
Cache Program Error
‘1’
Page N failed in Cache Program operation
‘0’
Page N programmed successfully
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NAND01GR3B3CV6 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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