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参数资料
型号： NAND08GR4B3AN6E
厂商： NUMONYX
元件分类： PROM
英文描述： 512M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
封装： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数： 27/59页
文件大小： 998K
代理商： NAND08GR4B3AN6E
33/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
DATA PROTECTION
The device has both hardware and software fea-
tures to protect against program and erase opera-
tions.
It features a Write Protect, WP, pin, which can be
used to protect the device against program and
erase operations. It is recommended to keep WP
at VIL during power-up and power-down.
In addition, to protect the memory from any invol-
untary program/erase operations during power-
transitions, the device has an internal voltage de-
tector which disables all functions whenever VCC
is below 1.5V.
The device features a Block Lock mode, which is
enabled by setting the Power-Up Read Enable,
Lock/Unlock Enable, PRL, signal to High.
The Block Lock mode has two levels of software
protection.
■
Blocks Lock/Unlock
■
Blocks Lock-down
Refer to Figure 21. for an overview of the protec-
tion mechanism.
Blocks Lock
All the blocks are locked simultaneously by issuing
a Blocks Lock command (see Table 10.).
All blocks are locked after power-up and when the
Write Protect signal is Low.
Once all the blocks are locked, one sequence of
consecutive blocks can be unlocked by using the
Blocks Unlock command.
Refer to Figure 25., Command Latch AC Wave-
forms for details on how to issue the command.
Blocks Unlock
A sequence of consecutive locked blocks can be
unlocked, to allow program or erase operations, by
issuing an Blocks Unlock command (see Table
10.).
The Blocks Unlock command consists of four
steps:
■
One bus cycle to setup the command
■
two or three bus cycles to give the Start Block
Address (refer to Table 8. , Table 9. and
Figure 19.)
■
one bus cycle to confirm the command
■
two or three bus cycles to give the End Block
Address (refer to Table 8. , Table 9.and Figure
19.).
The Start Block Address must be nearer the logi-
cal LSB (Least Significant Bit) than End Block Ad-
dress.
If the Start Block Address is the same as the End
Block Address, only one block is unlocked.
Only one consecutive area of blocks can be un-
locked at any one time. It is not possible to unlock
multiple areas.
Figure 19. Blocks Unlock Operation
Note: Three address cycles are required for 2,4 and 8 Gb devices. The 512Mb and 1Gb devices only require two address cycles.
I/O
WP
Start Block Address, 3 cycles
ai08670
23h
Blocks Unlock
Command
Add1
Add2
Add3
24h
Add1
Add2
Add3
End Block Address, 3 cycles
相关PDF资料
PDF描述
NAND128W4A2BN1E 8M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND256R4A2AN6E 16M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
NAND256R4A2CV6F 16M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
NAND256W3A0AN6F 32M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3A0AN1T 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
NAND08GW3B2AN6E 功能描述:闪存 4 GBit 2112 Byte 1056 WP 1.8v/3v RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND08GW3B2AN6F 功能描述:闪存 4 GB 2112B 1056 Word Pg 1.8V/3V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND08GW3B2BN6E 制造商:Micron Technology Inc 功能描述:NAND & S.MEDIA FLASH - Trays
NAND08GW3B2CN6E 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND08GW3B2CN6F 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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