参数资料
型号: NAND512R3A2CN1F
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 53/57页
文件大小: 916K
代理商: NAND512R3A2CN1F
57/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
相关PDF资料
PDF描述
NAND512R3A2AV1E 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3A0AZB6F 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R3A2AZB6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA55
NAND01GW3A0CZB1F 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND01GW3A2AN1 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
NAND512R3A2CZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
NAND512R3A2CZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R
NAND512R3A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R3A2DZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
NAND512R3A2SE06 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film