参数资料
型号: NAND512W3A2DZA6T
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 64M X 8 FLASH 3V PROM, 12000 ns, PBGA63
封装: 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
文件页数: 4/5页
文件大小: 150K
代理商: NAND512W3A2DZA6T
4/5
PART NUMBERING
Table 3. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’.
For further information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND512R3A
0
A ZA
1
T
Device Type
NAND Flash Memory
Density
128 = 128Mb
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = VCC = 1.65 to 1.95V
W = VCC = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
A = 528 Bytes/ 264 Word Page
Options
0 = normal
1 = Read Page0 at Power-up
2 = Chip Enable Don’t Care
3 = Chip Enable Don’t Care Enabled and Read Page0 at Power-up
Silicon Version
A, B, C, D
Package
N = TSOP48 12 x 20mm
ZA = VFBGA63 9 x 11x1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices)
ZA = VFBGA63 8.5 x 15x1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices)
ZA = TFBGA63 8.5 x 15x1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相关PDF资料
PDF描述
NAND512W4A0DN1F 32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
NAND512W4A2DN6F 32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
NAND512W4A3CZA1T 32M X 16 FLASH 3V PROM, 12000 ns, PBGA63
NAND02GW4B3AN6T 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND02GW4B3BN1 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
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