参数资料
型号: NAND99R3M2AZBB5E
厂商: NUMONYX
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA107
封装: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
文件页数: 13/33页
文件大小: 724K
代理商: NAND99R3M2AZBB5E
Signals description
NANDxxxxMx
2.25
LPSDRAM VDDQD supply voltage
VDDQD provides the power supply to the I/O pins and enables all outputs to be powered
independently of VDDD. VDDQD can be tied to VDDD or can use a separate supply.
It is recommended to power up and power down VDDD and VDDQD together to avoid
conditions that would result in data corruption.
2.26
LPSDRAM VSSD ground
VSSD is the reference for the NAND flash power supply. It must be connected to the system
ground.
2.27
VSSQD ground
VSSQD ground is the reference for the input/output circuitry driven by VDDQD. VSSQD must be
connected to VSSD.
Note:
Each device in a system should have VDDD and VDDQD decoupled with a 0.1 F ceramic
capacitor close to the pin (high-frequency, inherently-low inductance capacitors should be
as close as possible to the package).
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