参数资料
| 型号： | NB4N11MDTEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR NB4N11MD |
| 设计资源： | NB4N11MDTEVB Gerber Files |
| 标准包装： | 1 |
| 系列： | * |
NB4N11MDTEVB
Evaluation Board User's
Manual for NB4N11M
http://onsemi.com
EVAL BOARD USER’S MANUAL
Description
ON Semiconductor has developed an evaluation board for
the NB4N11M device as a convenience for the customers
interested in performing their own device engineering
assessment. This board provides a high bandwidth 50 W
controlled impedance environment. The pictures in Figure 1
show the top and bottom view of the evaluation board, which
can be configured in several different ways.
This NB4N11M evaluation board manual contains:
? Appropriate Lab Setup
? Assembly Instructions
? Bill of Materials
This manual should be used in conjunction with the
NB4N11M device data sheet, which contains full technical
details on the device specifications and operation.
Top View
Board Lay ? Up
The NB4N11M evaluation board is implemented in four
layers with split (dual) power supplies (Figure 7, Evaluation
Board Lay ? up). For standard lab setup, a split (dual) power
supply is essential to enable the 50 W internal impedance in
the oscilloscope as a devices termination. The first layer or
primary trace layer is 0.005 ″ thick Rogers RO4003 material,
which is designed to have equal electrical length on all signal
traces from the device under the test (DUT) to the sense
output. The second layer is the 1.0 oz copper ground plane.
The FR4 dielectric material is placed between second and
third layer and between third and fourth layer. The third
layer is also 1.0 oz copper ground plane. The fourth layer is
the secondary trace layer.
Bottom View
Figure 1. Top and Bottom View of the NB4N11M Evaluation Board
? Semiconductor Components Industries, LLC, 2012
February, 2012 ? Rev. 1
1
Publication Order Number:
EVBUM2071/D
相关PDF资料 |
PDF描述 |
|---|---|
| NB4N441MNGEVB | BOARD EVAL NB4N441MNG |
| NB4N507ADEVB | BOARD EVAL FOR BBG NB4N507AD |
| NB4N855SMEVB | CUSTOMER EVALUATION BRD |
| NB6L11MMNGEVB | BOARD EVAL NB6L11MMN CLK BUFFER |
| NB6L239MNEVB | BOARD EVAL BBG NB6L239MND |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NB4N11MDTG | 功能描述:时钟缓冲器 MLTLVL IN-CML RECBUF RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| NB4N11MDTR2G | 功能描述:时钟缓冲器 MLTLVL IN-CML RECBUF RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| NB4N11SMNG | 功能描述:时钟缓冲器 LVDS FANOUT BUFF/ TRANS RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| NB4N11SMNR2G | 功能描述:时钟缓冲器 LVDS FANOUT BUFF/ TRANS RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| NB4N121K | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:3.3V Differential In 1:21 Differential Fanout Clock Driver with HCSL level Output |
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