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参数资料
| 型号： | NCL30000LED3GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/22页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL 17W 350MA NONDIM DVR |
| 设计资源： | NCL30000LED2GEVB Schematic NCL30000LED2GEVB Gerber Files NCL30000LED2GEVB Bill of Materials |
| 标准包装： | 1 |
| 电流 - 输出 / 通道： | 350mA |
| 输出及类型： | 1，隔离 |
| 输出电压： | 12 ~ 50 V |
| 输入电压： | 90 ~ 305VAC |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCL30000 |
| 其它名称： | NCL30000LED3GEVB-ND NCL30000LED3GEVBOS |
NCL30000
Table 3. ELECTRICAL CHARACTERISTICS (Continued)
V MFP = 2.4 V, V Control = 4 V, Ct = 1 nF, V CS = 0 V, V ZCD = 0 V, C DRV = 1 nF, V CC = 12 V, unless otherwise specified
(For typical values, T J = 25 ? C. For min/max values, T J = ? 40 ? C to 125 ? C, unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
RAMP CONTROL
Ct Peak Voltage
On Time Capacitor Charge Current
Ct Capacitor Discharge Duration
PWM Propagation Delay
V COMP = open
V COMP = open
V Ct = 0 V to V Ct(MAX)
V COMP = open
V Ct = V Ct(MAX) ? 100 mV to 500 mV
dV/dt = 30 V/ m s
V Ct = V Control ? Ct (offset)
to V DRV = 10%
V Ct(MAX)
I charge
t Ct(discharge)
t PWM
4.775
235
?
?
4.93
275
50
130
5.025
297
150
220
V
m A
ns
ns
ZERO CURRENT DETECTION
ZCD Arming Threshold
ZCD Triggering Threshold
ZCD Hysteresis
ZCD Bias Current
Positive Clamp Voltage
Negative Clamp Voltage
ZCD Propagation Delay
Minimum ZCD Pulse Width
Maximum Off Time in Absence of ZCD
Transition
V ZCD = Increasing
V ZCD = Decreasing
V ZCD = 5 V
I ZCD = 3 mA
I ZCD = ? 2 mA
V ZCD = 2 V to 0 V ramp,
dV/dt = 20 V/ m s
V ZCD = V ZCD(TRIG) to V DRV = 90%
Falling V DRV = 10% to
Rising V DRV = 90%
V ZCD(ARM)
V ZCD(TRIG)
V ZCD(HYS)
I ZCD
V CL(POS)
V CL(NEG)
t ZCD
t SYNC
t start
1.25
0.6
500
? 2
9.8
? 0.9
?
?
75
1.4
0.7
700
?
10
? 0.7
100
70
165
1.55
0.83
900
+2
12
? 0.5
170
?
300
V
V
mV
m A
V
V
ns
ns
m s
DRIVE
Drive Resistance
Rise Time
Fall Time
Drive Low Voltage
I source = 100 mA
I sink = 100 mA
10% to 90%
90% to 10%
V CC = V CC(on) ? 200 mV,
I sink = 10 mA
R OH
R OL
t rise
t fall
V out(start)
?
?
?
?
?
12
6
35
25
?
20
13
80
70
0.2
W
ns
ns
V
CURRENT SENSE
Current Sense Voltage Threshold
V ILIM
0.45
0.5
0.55
V
Leading Edge Blanking Duration
Overcurrent Detection Propagation
Delay
Current Sense Bias Current
V CS = 2 V, V DRV = 90% to 10%
dV/dt = 10 V/ m s
V CS = V ILIM to V DRV = 10%
V CS = 2 V
t LEB
t CS
I CS
100
40
? 1
195
100
?
350
170
1
ns
ns
m A
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