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参数资料
| 型号： | NCL30000LED3GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/22页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL 17W 350MA NONDIM DVR |
| 设计资源： | NCL30000LED2GEVB Schematic NCL30000LED2GEVB Gerber Files NCL30000LED2GEVB Bill of Materials |
| 标准包装： | 1 |
| 电流 - 输出 / 通道： | 350mA |
| 输出及类型： | 1，隔离 |
| 输出电压： | 12 ~ 50 V |
| 输入电压： | 90 ~ 305VAC |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCL30000 |
| 其它名称： | NCL30000LED3GEVB-ND NCL30000LED3GEVBOS |
NCL30000
TYPICAL CHARACTERISTICS
16
14
12
10
V MFP = 2.6 V
220
215
210
205
200
195
8
190
185
V MFP = 0.5 V
6
? 50
? 25
0
25
50
75
100
125
180
? 50
? 25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE ( ? C)
Figure 8. Error Amplifier Sink Current vs.
Junction Temperature
T J , JUNCTION TEMPERATURE ( ? C)
Figure 9. Error Amplifier Source Current vs.
Junction Temperature
125
200
200
120
115
110
105
180
160
140
120
100
Transconductance
Phase
180
160
140
120
100
100
95
90
85
? 50
? 25
0
25
50
75
100
125
80
60
40
20
0
R Control = 100 k W
C Control = 2 pF
V MFP = 2.5 Vdc, 1 Vac
V CC = 12 V
T A = 25 ? C
0.01 0.1 1
10
100
80
60
40
20
0
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T J , JUNCTION TEMPERATURE ( ? C)
Figure 10. Error Amplifier Transconductance
vs. Junction Temperature
278
276
274
272
270
268
266
f, FREQUENCY (kHz)
Figure 11. Error Amplifier Transconductance
and Phase vs. Frequency
0.3
? 50
? 25
0
25
50
75
100
125
264
? 50
? 25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE ( ? C)
Figure 12. Minimum Control Voltage to Generate
Drive Pulses vs. Junction Temperature
http://onsemi.com
8
T J , JUNCTION TEMPERATURE ( ? C)
Figure 13. On Time Capacitor Charge Current
vs. Junction Temperature
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