参数资料
| 型号： | NCP1031POEEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/19页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP1031 POE DC CONV |
| 设计资源： | NCP1031POEEVB Schematic NCP1031POEEVB Gerber Files NCP1031POEEVB Bill of Materials |
| 标准包装： | 1 |
| 主要目的： | 电源管理，以太网供电（POE） |
| 嵌入式： | 否 |
| 已用 IC / 零件： | NCP1031 |
| 已供物品： | 板 |
| 其它名称： | NCP1031POEEVB-ND NCP1031POEEVBOS |
NCP1030, NCP1031
DC ELECTRICAL CHARACTERISTICS (V DRAIN = 48 V, V CC = 12 V, C T = 560 pF, V UV = 3 V, V OV = 2 V, V FB = 2.3 V,
V COMP = 2.5 V, T J = --40 ? C to 125 ? C, typical values shown are for T J = 25 ? C unless otherwise noted.) (Note 2)
Characteristics
Symbol
Min
Typ
Max
Unit
OSCILLATOR
Frequency (C T = 560 pF, Note 3)
T J = 25 ? C
T J = --40 ? C to 125 ? C
Frequency (C T = 100 pF)
Charge Current (V CT = 3.25 V)
Discharge Current (V CT = 3.25 V)
Oscillator Ramp
Peak
Valley
f OSC1
f OSC2
I CT(C)
I CT(D)
Vrpk
V rvly
275
260
--
--
--
--
--
300
--
800
215
645
3.5
3.0
325
325
--
--
--
--
--
kHz
kHz
m A
m A
V
PWM COMPARATOR
Maximum Duty Cycle
DC MAX
70
75
80
%
POWER SWITCH CIRCUIT
Power Switch Circuit On--State Resistance (I D = 100 mA)
NCP1030
T J = 25 ? C
T J = 125 ? C
NCP1031
T J = 25 ? C
T J = 125 ? C
Power Switch Circuit and Startup Circuit Breakdown Voltage
(I D = 100 m A, T J = 25 ? C)
Power Switch Circuit and Startup Circuit Off--State Leakage Current
(V DRAIN = 200 V, V UV = 2.0 V)
T J = 25 ? C
T J = --40 to 125 ? C
Switching Characteristics (V DS = 48 V, R L = 100 Ω )
Rise Time
Fall Time
R DS(on)
V (BR)DS
I DS(off)
t r
t f
--
--
--
--
200
--
--
--
--
4.1
6.0
2.1
3.5
--
13
--
22
24
7.0
12
3.0
6.0
--
25
50
--
--
Ω
V
m A
ns
CURRENT LIMIT AND OVER TEMPERATURE PROTECTION
Current Limit Threshold (T J = 25 ? C)
NCP1030 (di/dt = 0.5 A/ m s)
NCP1031 (di/dt = 1.0 A/ m s)
Propagation Delay, Current Limit Threshold to Power Switch Circuit Output
(Leading Edge Blanking plus Current Limit Delay)
Thermal Protection (Note 4)
Shutdown Threshold (T J Increasing)
Hysteresis
I LIM
t PLH
T SHDN
T HYS
350
700
--
--
--
515
1050
100
150
45
680
1360
--
--
--
mA
ns
? C
TOTAL DEVICE
Supply Current After UV Turn--On
Power Switch Enabled
Power Switch Disabled
Non--Fault condition (V FB = 2.7 V)
Fault Condition (V FB = 2.7 V, V UV = 2.0 V)
I CC1
I CC2
I CC3
2.0
--
--
3.0
1.5
0.65
4.0
2.0
1.2
mA
2. Production testing for NCP1030DMR2 is performed at 25 ? C only; limits at --40 ? C and 125 ? C are guaranteed by design.
3. Oscillator frequency can be externally synchronized to the maximum frequency of the device.
4. Guaranteed by design only.
http://onsemi.com
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