参数资料
型号: NCP1280DR2
厂商: ON Semiconductor
文件页数: 6/17页
文件大小: 0K
描述: IC CTRLR PWM PROG OVP HV 16SOIC
标准包装: 2,500
输出隔离: 隔离
频率范围: 140kHz ~ 320kHz
输入电压: 7 V ~ 25 V
工作温度: -40°C ~ 150°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 带卷 (TR)
NCP1280
ELECTRICAL CHARACTERISTICS (V in = 82 V, V AUX = 12 V, V EA = 2 V, R T = 101 k W , C CSKIP = 6800 pF,
R D = 60.4 k W , R FF = 1.0 M W , for typical values T J = 25 ° C, for min/max values, T J = ? 40 ° C to 125 ° C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OSCILLATOR
Frequency (R T = 101 k W )
T J = 25 ° C
T J = ? 40 ° C to 125 ° C
Frequency (R T = 220 k W , V EA = 1.0 V)
T J = 25 ° C
T J = ? 40 ° C to 125 ° C
f OSC1
f OSC2
285
280
142
140
300
?
150
?
315
320
158
160
kHz
kHz
MAXIMUM DUTY CYCLE COMPARATOR
Maximum Duty Cycle (V EA = 3.0 V, T J = 25 ° C)
R P = 0 W , R MDP = open
R P = open, R MDP = open
Open Circuit Voltage
DC MAX
V DCMAX
57
75
0.40
62
80
0.47
66
85
0.60
%
V
SOFT ? START
Charge Current (V SS = 1.0 V)
Discharge Current (V SS = 5.0 V, V UV/OV = 0 V)
I SS(C)
I SS(D)
5.0
20
6.2
52.5
7.4
?
m A
mA
PWM COMPARATOR
Input Resistance (V 1 = 1.25 V, V 2 = 1.50 V)
R IN(VEA) = (V 2 ? V 1 )/(I 2 ? I 1 )
Lower Input Threshold
Delay to Output (from V OH to 0.5 V OH )
R IN(VEA)
V EA(L)
t PWM
8.0
0.3
?
22
0.7
200
60
0.9
?
k W
V
ns
5.0 V REFERENCE
Output Voltage (I REF = 0 mA)
T J = 25 ° C
T J = ? 40 ° C to 125 ° C
Load Regulation (I REF = 0 to 6 mA)
Line Regulation (V AUX = 7.5 to 16 V)
V REF
V REF(Load)
V REF(Line)
4.9
4.8
?
?
5.0
?
10
50
5.1
5.1
50
100
V
mV
mV
CONTROL OUTPUTS
Output Voltage (I OUT = 0 mA)
Low State
High State
Overlap Delay
R D = 1 M W
Leading
Trailing
R D = 60 k W
Leading
Trailing
Drive Resistance (V in = 15 V)
Sink (V EA = 0 V, V OUT = 2 V)
Source (V EA = 3 V, V OUT = 10 V)
Rise Time (C L = 100 pF, 10% to 90% of V OH )
Fall Time (C L = 100 pF, 90% to 10% of V OH )
V OL
V OH
t D
R SNK
R SRC
t on
t off
?
?
?
?
50
32
20
50
?
?
0.25
11.8
200
170
90
72
40
90
30
12
?
?
?
?
130
130
80
170
?
?
V
ns
W
ns
ns
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