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参数资料
| 型号： | NCP1580DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 412kHz |
| 占空比： | 95% |
| 电源电压： | 4.5 V ~ 13.2 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
NCP1580
Thermal Considerations
The power dissipation of the NCP1580 varies with the
MOSFETs used, V CC , and the boost voltage (V BST ). The
average MOSFET gate current typically dominates the
control IC power dissipation. The IC power dissipation is
Where:
Q BG = total lower MOSFET gate charge at V CC .
The junction temperature of the control IC can then be
calculated as:
determined by the formula:
TJ + TA ) PIC
q JA.
PIC + (ICC
VCC) ) PTG ) PBG.
Where:
Where:
P IC = Control IC power dissipation,
I CC = IC measured supply current,
V CC = IC supply voltage,
P TG = Top gate driver losses,
P BG = Bottom gate driver losses.
The upper (switching) MOSFET gate driver losses are:
PTG + QTG fSW VBST.
Where:
Q TG = Total upper MOSFET gate charge at VBST,
f SW = The switching frequency,
V BST = The BST pin voltage.
The lower (synchronous) MOSFET gate driver losses are:
T J = The junction temperature of the IC,
T A = The ambient temperature,
q JA = The junction?to?ambient thermal resistance of the
IC package.
The package thermal resistance (R q JC ) can be obtained
from the specifications section of this data sheet and a
calculation can be made to determine the IC junction
temperature. In addition, a thermal resistance
(Junction?to?Ambient/Safe Operating Area) curve has been
included below to further aid design. However, it should be
noted that the physical layout of the board, the proximity of
other heat sources such as MOSFETs and inductors, and the
amount of metal connected to the IC, impact the temperature
of the device. Use these calculations as a guide, but
measurements should be taken in the actual application.
PBG + QBG
fSW
175
165
155
VCC.
0.570
0.595
0.620
0.645
0.670
0.695
145
135
125
2 oz cu
1 oz cu
0.720
0.745
0.770
0.795
0.820
0.845
115
0
0.870
50 100 150 200 250 300 350 400 450 500 550 600 650
Copper Area (mm 2 )
Figure 16. Thermal Resistance
(Junction?to?Ambient/Safe Operating Area)
http://onsemi.com
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| NCP1580DR2G | 功能描述:电压模式 PWM 控制器 Low Voltage Synchronous Buck RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1581DR2G | 功能描述:电压模式 PWM 控制器 SYNCHRONOUS PWM BUCK CONV RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1581SBCKRGEVB | 功能描述:BOARD EVAL NCP1581 RoHS:是 类别:编程器，开发系统 >> 评估板 - DC/DC 与 AC/DC（离线）SMPS 系列:* 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:True Shutdown™ 主要目的:DC/DC，步升 输出及类型:1，非隔离 功率 - 输出:- 输出电压:- 电流 - 输出:1A 输入电压:2.5 V ~ 5.5 V 稳压器拓扑结构:升压 频率 - 开关:3MHz 板类型:完全填充 已供物品:板 已用 IC / 零件:MAX8969 |
| NCP1582ADR2G | 功能描述:电压模式 PWM 控制器 BUCK CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1582DR2G | 功能描述:电压模式 PWM 控制器 ANA BUCK CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
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